BUY 17N80C3 https://www.utsource.net/itm/p/12612312.html
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Breakdown Voltage | V(BR)DSS | - | 800 | - | V | Drain-to-Source Breakdown Voltage |
| Continuous Drain Current (Tc = 25°C) | ID | - | 17 | - | A | Continuous Drain Current at Tc = 25°C |
| Continuous Drain Current (Tc = 100°C) | ID | - | 8.5 | - | A | Continuous Drain Current at Tc = 100°C |
| Gate Threshold Voltage | VGS(th) | 2.0 | 4.0 | 6.0 | V | Gate Threshold Voltage |
| On-State Resistance (VGS = 10V, ID = 17A) | RDS(on) | - | 0.18 | - | Ω | On-State Resistance |
| Total Power Dissipation (Tc = 25°C) | PD | - | 100 | - | W | Total Power Dissipation at Tc = 25°C |
| Junction Temperature | TJ | -55 | - | 150 | °C | Operating Junction Temperature Range |
| Storage Temperature | TSTG | -55 | - | 150 | °C | Storage Temperature Range |
Handling Precautions:
Mounting:
Biasing:
Current Limiting:
Thermal Management:
Storage:
Testing:
Safety:
By following these instructions, you can ensure optimal performance and longevity of the 17N80C3 MOSFET.
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