2SA1306: Pilihan Terbaik di United States (USA) Utsource Holding Company Limited

Deskripsi

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Collector-Emitter Voltage	Vceo	-	-	60	V	Ic = 0, Tc = 25°C
Collector-Base Voltage	Vcbo	-	-	70	V	Ib = 0, Tc = 25°C
Emitter-Base Voltage	Vebo	-	-	5	V	Ie = 5 mA, Tc = 25°C
Collector Current	Ic	-	1.5	2	A	Vce = 10 V, Tc = 25°C
Base Current	Ib	-	0.15	0.2	A	Vce = 10 V, Ic = 1.5 A, Tc = 25°C
Power Dissipation	Ptot	-	-	65	W	Ta = 25°C
Storage Temperature	Tstg	-55	-	150	°C
Operating Junction Temperature	Tj	-55	-	150	°C

Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified range.
- Use a suitable heatsink with thermal compound to enhance heat dissipation.
Biasing:
- Apply the base current (Ib) carefully to avoid exceeding the maximum base current rating.
- Use a current-limiting resistor in series with the base to prevent overcurrent.
Operation:
- Do not exceed the maximum collector-emitter voltage (Vceo) or collector-base voltage (Vcbo).
- Keep the power dissipation (Ptot) below the maximum rating to avoid thermal damage.
Storage:
- Store the transistor in a dry, cool place away from direct sunlight.
- Handle with care to avoid static discharge which can damage the device.
Testing:
- Test the transistor using a multimeter or a dedicated transistor tester to ensure it is functioning correctly.
- Verify the parameters under the specified conditions to ensure reliable operation.

(For reference only)