Deskripsi
BUY BA51-108C https://www.utsource.net/itm/p/911837.html
| Parameter |
Value |
Unit |
| Part Number |
BA51-108C |
|
| Type |
NPN Silicon Transistor |
|
| Collector-Emitter Voltage (Vce) |
45 |
V |
| Collector Base Voltage (Vcb) |
50 |
V |
| Emitter Base Voltage (Veb) |
6 |
V |
| Collector Current (Ic) |
800 |
mA |
| Power Dissipation (Ptot) |
625 |
mW |
| Transition Frequency (Ft) |
300 |
MHz |
| DC Current Gain (hFE) |
100-400 |
|
| Operating Temperature Range |
-55 to 150 |
°C |
Instructions for Use:
- Mounting: Ensure the transistor is mounted in a way that provides adequate heat dissipation, especially if operating near its maximum power dissipation.
- Biasing: Proper biasing of the base-emitter junction is critical for optimal performance and to avoid thermal runaway.
- Handling: Handle with care to prevent damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
- Storage: Store in a cool, dry place away from direct sunlight and sources of heat.
- Soldering: Use temperatures not exceeding 260°C for no more than 10 seconds per operation to avoid damaging the device.
- Testing: When testing, ensure that voltage and current limits are not exceeded to prevent damage to the component.
- Application: Suitable for general-purpose switching and amplification applications within specified limits.
(For reference only)
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