SILICON PNP EPITAXAL TYPE
DESCRIPTION
* Strobo Flash Applications.
* Medium Power Amplifier Applications.
FEATURES
* High DC Current Gain and Excellent hFE Linearity.
* hFE(1)=140-600, (VCE= -1V,IC= -0.5A)
* hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)
* Low Saturation Voltage
* VCE (SAT)= -0.5V(Max.), (IC= -2A,IE= -50mA)
