HM5264165FTT-A60

HM5264165FTT-A60

Category: Elec-component Available (Qty:9999999)
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Description

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64M LVTTL interface SDRAM 133 MHz/100 MHz

Parameter Description Value
Product Name High-Speed CMOS Static RAM HM5264165FTT-A60
Type SRAM
Organization 1,048,576 x 16 bits
Access Time (taa) Access time from address to data valid 10 ns
Cycle Time (tcyc) Minimum cycle time 10 ns
Supply Voltage (VCC) Operating supply voltage 3.3 V
Standby Current (ISB) Supply current in standby mode 10 μA
Active Current (IAV) Supply current in active mode 100 mA
Package Type Thin Small Outline Package (TSOP) 44-Pin TSOP
Operating Temperature Range of operating temperature -40°C to +85°C
Data Retention Voltage Voltage at which data retention is guaranteed 1.7 V to 3.6 V
Write Cycle Time Time required for a write operation 10 ns
Power Down Mode Feature that allows the device to enter low power consumption state Supported

Instructions:

  1. Power Supply Connection: Ensure that the supply voltage (VCC) is set to 3.3V as specified. Connect VCC and GND pins appropriately.
  2. Addressing and Data Lines: Connect the address lines (A0-A19) and data lines (DQ0-DQ15) to your system bus. Ensure correct signal integrity and timing.
  3. Control Signals: Properly connect control signals such as Chip Select (CS), Output Enable (OE), and Write Enable (WE) according to your system requirements.
  4. Timing Considerations: Adhere to the specified access and cycle times to ensure reliable operation. Use appropriate delays if necessary.
  5. Temperature Range: Operate within the specified temperature range (-40°C to +85°C) to maintain performance and reliability.
  6. Power Down Mode: Utilize the power-down mode feature by applying the correct logic levels to control pins to reduce power consumption when not actively using the memory.
  7. Handling Precautions: Handle the device with care to avoid electrostatic discharge (ESD) damage. Use proper ESD protection measures during handling and installation.
(For reference only)

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